Email: atsufumi.hirohata@york.ac.uk
Homepage: http://www-users.york.ac.uk/~ah566/
Tel: +44 (0)1904 32 3245
Fax: +44 (0)1904 32 2335
Research Area: Intelligent Systems and Nano-science Group » Nano-scale technologies
Areas of Expertise: Spintronics, Nanotechnology
Atsufumi Hirohata joined the School of Physics, Engineering and Technology in September 2007. He has over 15 years of experience in spintronics, ranging from magnetic-domain imaging to spin-current interference. He is currently an editorial board member of Journal of Physics D and Spin. He is also a member of both Administrative and Techical Committees of the IEEE Magnetics Society. He holds a visiting associate professorship at Tohoku University and a Royal Society Industry Fellowship in collaboration with Hitachi Cambridge Laboratory.
Before coming to York, he was a researcher at RIKEN, a Japanese governmental research institute, for over two years, where he designed a spin-current interference device, which can be used as a spin operation in a spintronic three-terminal transistor. He was before working as a postdoctoral researcher at Tohoku University, and successfully fabricated a perfectly ordered epitaxial full-Heusler alloy films, which was the first report to their knowledge and was acknowledged by several awards. He also worked as a postdoctoral associate at Massachusetts Institute of Technology, where he demonstrated basic function of a phase-change memory, which has been recently released in a market by Intel. He received his PhD in Physics at the University of Cambridge in 2001 and then served as a research associate at the Cavendish Laboratory in order to complete his study on spin detection of optically pumped spin-polarised electrons in a semiconductor with using a ferromagnetic overlayers, which attracted great interest, resulting a few invited talks and papers. He was originally graduated from Keio University for his BSc and MSc studies in Physics.
His present research interests include fabrication of a spin operator and nano-spin motor as well as growth of a half-metallic film. Further details can be found in research and publications.
Spintronics; quantum nanoelectronics
Introductory nanotechnology; Nanoelectronics; Mathematics; Information Storage and Spintronics
Nanoelectronics (Year 3)
Advanced Information Storage (Year 4)
Details of his research can be found at http://www-users.york.ac.uk/~ah566/.